IRLL024NTRPBF vs IRFR024NTRPBF 对比
详细并排对比 IRLL024NTRPBF 出自 Infineon 和 IRFR024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLL024NTRPBF | IRFR024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.31 |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | — |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | — |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封装 | SOT-223 (4-pin) | TO-252-3 (DPAK, SC-63), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| 晶体管类型 | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 17 A (at TC = 25 C) |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| 工作结温 | — | -55 C to +175 C |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |