IRLML2060TRPBF vs BSS123IXTSA1 对比

详细并排对比 IRLML2060TRPBF 出自 Infineon 和 BSS123IXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML2060TRPBF IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2060TRPBF - 60V N-Ch MOSFET, 1.2A, SOT-23 | Infineon

IRLML2060TRPBF ✓ 量产中
Infineon
BSS123IXTSA1 BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 ✓ 量产中

规格对比

参数 IRLML2060TRPBF BSS123IXTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.13 $0.11
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 1.2 A 190 mA
Pulsed Drain Current (IDM) 4.8 A —
Gate-to-Source Voltage (VGS) max +/- 12 V —
Gate Threshold Voltage (VGS(th)) 1.8 V typical [DATA_NEEDED: VGS(th) min/typ/max]
RDS(on) max at VGS=10V 480 mOhm —
RDS(on) max at VGS=4.5V 650 mOhm (typical 580 mOhm) —
Power Dissipation (PD) at TA=25C 1.25 W 500 mW
Thermal Resistance Junction-to-Ambient (RthetaJA) 100 C/W —
工作结温 -55C to +150C —
封装 SOT-23 (Micro3, 3-pin) PG-SOT-23-3 (SOT-23-3)
安装类型 Surface Mount Surface Mount
Technology IR HEXFET (Trench Gate) OptiMOS Small-Signal
RoHS 状态 Compliant —
无卤 Yes —
MSL 等级 MSL1 [DATA_NEEDED: MSL rating]
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
工作温度范围 — -55C to +150C (per family datasheet)
Qualification — Industrial
Configuration — Single N-Channel
Lead-Free / RoHS — Yes (per distributor listing)
Gate Drive Logic Level — Logic-level compatible

数据手册与资源

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