IRLML6346TRPBF vs BSS306NH6327XTSA1 对比

详细并排对比 IRLML6346TRPBF 出自 Infineon 和 BSS306NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF ✓ 量产中
Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 量产中

规格对比

参数 IRLML6346TRPBF BSS306NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.18 $0.14
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) 2.3 A (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: typical VGS(th) in V]
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
工作结温 -55C to +150C —
封装 Micro3 / SOT-23 SOT-23 (PG-SOT23), 3-pin
安装类型 Surface Mount Surface Mount
Technology HEXFET Power MOSFET MOSFET (Metal Oxide)
MSL 等级 1 —
Lead-Free Finish Yes (PBF suffix) —
RoHS 状态 Compliant —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
FET Type — N-Channel
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
工作温度 — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

数据手册与资源

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