IRLR120NTRPBF vs IRFU5305PBF 对比

详细并排对比 IRLR120NTRPBF 出自 Infineon 和 IRFU5305PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 量产中

规格对比

参数 IRLR120NTRPBF IRFU5305PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.68
FET Type N-Channel MOSFET —
Technology HEXFET (Fifth Generation, planar) —
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 42 nC (typical)
Power Dissipation (Pd) at Tc=25C 48 W —
工作温度范围 -55C to +175C (junction) —
封装 TO-252AA (DPAK), 3-pin surface mount IPAK (TO-251AA) Through-Hole, 3 pins
安装类型 Surface Mount Through Hole
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL 等级 1 —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc — -31 A
Pulsed Drain Current (IDM) — -110 A (pulsed)
On-Resistance RDS(on) max @ VGS=-10V — 65 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (PD) at Tc=25°C — 110 W
工作结温 — -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) — 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 62 °C/W
Avalanche Rated — Yes (EAS rated)
RoHS Compliance — Compliant

数据手册与资源

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