IRS2011STRPBF vs IRS2302STRPBF 对比

详细并排对比 IRS2011STRPBF 出自 Infineon 和 IRS2302STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2011STRPBF IRS2302STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.54
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels —
输出数量 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V, 5 V, 15 V
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 5 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
封装 8-SOIC (DSO-8) 8-SOIC (3.90 mm body)
工作温度 -40 C to +125 C -40C to +125C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Driver Configuration — Half-Bridge (High and Low Side, Independent)
Number of Drivers — 2
Offset Voltage (High-Side) — Up to +600 V
Source Current (typ.) — 0.2 A
Sink Current (typ.) — 0.35 A
上升时间 — 130 ns (typ.)
下降时间 — 50 ns (typ.)
Propagation Delay — 220 ns (typ.)
Turn-On Delay — [DATA_NEEDED: exact turn-on delay]
Turn-Off Delay — [DATA_NEEDED: exact turn-off delay]
Input Type — Non-Inverting
Shutdown Pin — Yes
UVLO — Yes (VCC and VBS)
Cross-Conduction Protection — Yes (built-in dead time)
MSL 等级 — 2 (per JEDEC J-STD-020)
无卤 — Yes

数据手册与资源

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