IRS2153DSTRPBF vs IR21531STRPBF 对比

详细并排对比 IRS2153DSTRPBF 出自 Infineon 和 IR21531STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS2153DSTRPBF IR21531STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.70
拓扑 Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
封装 8-pin SOIC 8-pin SOIC (SO-8)
安装类型 Surface Mount Surface Mount
工作温度范围 -40C to +125C —
Technology HVIC + latch-immune CMOS —
RoHS 状态 Compliant Compliant (ROHS3)
Lead-Free Yes —
Configuration — Half-Bridge
Driver Type — High-side and Low-side, self-oscillating
输出数量 — 2 (high-side, low-side)
Supply Voltage (VCC) — 10 V to 20 V
Internal VCC Clamp — 15.6 V
High-Side Offset Voltage — up to 600 V
Peak Source/Sink Current — 250 mA
上升时间 — 80 ns
下降时间 — 45 ns
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
Input Logic — CMOS Schmitt-trigger (RC timing)
工作温度 — -40C to +125C
Lead Finish — Pb-free (PBF suffix)

数据手册与资源

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