IRS21814MTRPBF vs IR2110SPBF 对比

详细并排对比 IRS21814MTRPBF 出自 Infineon 和 IR2110SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS21814MTRPBF IR2110SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.81 $1.98
Configuration High and Low Side, Independent —
Driver Channels 2 (half-bridge) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (bootstrap) —
Offset Voltage (High-Side) Up to +600 V —
Peak Source Current (typ.) 1.9 A —
Peak Sink Current (typ.) 2.3 A —
Logic Input Compatibility 3.3 V and 5 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 180 ns —
Delay Matching (HS to LS) [DATA_NEEDED: HS-LS delay matching spec] —
Undervoltage Lockout Yes (VCC and VBS) —
dV/dt Immunity Yes (negative-transient tolerant) —
封装 16-MLPQ (4x4 mm) with Exposed Pad 16-pin SOIC (SO-16, DW suffix)
安装类型 Surface Mount Surface Mount
工作温度 -40C to +125C —
Packaging Tape & Reel —
RoHS 状态 Compliant —
功能 — Half-bridge gate driver
拓扑 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
工作温度范围 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

数据手册与资源

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