IRS21814MTRPBF vs IR2110SPBF Comparison

Detailed side-by-side comparison of IRS21814MTRPBF by Infineon and IR2110SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS21814MTRPBF IR2110SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration High and Low Side, Independent —
Driver Channels 2 (half-bridge) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (bootstrap) —
Offset Voltage (High-Side) Up to +600 V —
Peak Source Current (typ.) 1.9 A —
Peak Sink Current (typ.) 2.3 A —
Logic Input Compatibility 3.3 V and 5 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Propagation Delay (typ.) 180 ns —
Delay Matching (HS to LS) [DATA_NEEDED: HS-LS delay matching spec] —
Undervoltage Lockout Yes (VCC and VBS) —
dV/dt Immunity Yes (negative-transient tolerant) —
Package 16-MLPQ (4x4 mm) with Exposed Pad 16-pin SOIC (SO-16, DW suffix)
Mounting Type Surface Mount Surface Mount
Operating Temperature -40C to +125C —
Packaging Tape & Reel —
RoHS Status Compliant —
Function — Half-bridge gate driver
Topology — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Operating Temperature Range — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

Datasheets & Resources

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