IS43TR16256AL-107MBLI-TR vs IS43TR16256AL-107MBL 对比

详细并排对比 IS43TR16256AL-107MBLI-TR 出自 ISSI, Integrated Silicon Solution Inc 和 IS43TR16256AL-107MBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI-TR IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI-TR ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBL ✓ 量产中

规格对比

参数 IS43TR16256AL-107MBLI-TR IS43TR16256AL-107MBL
品牌 ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.60 $6.00
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4 Gbit 4 Gbit
存储组织 256M x 16 256M x 16
数据速率 1866 Mbps 1866 MT/s
Clock Frequency 933 MHz 933 MHz
Access Time 20 ns 20 ns
Supply Voltage (VDD) 1.35 V ± 0.1 V —
Supply Voltage (VDDQ) 1.35 V ± 0.1 V —
封装 96-TWBGA (9x13 mm) 96-TWBGA (9x13 mm)
接口 Parallel Parallel
工作温度范围 0°C to +95°C (Tc) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
ECCN EAR99 —
Part Status Active —
电源电压 — 1.35 V
CAS 延迟 — 13
工作温度 — 0°C to +95°C (case)
Burst Length — 8 and 4 (with burst chop)
On-Die Termination — Yes (ODT)

数据手册与资源

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