IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI
料号： IS43TR16256AL-107MBLI-TR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $6.9 | $690.00 |
| 500 | $6.2 | $3,100.00 |
| 1,000 | $5.6 | $5,600.00 |
IS43TR16256AL-107MBLI-TR 概述
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical.
Key features include a parallel interface with 16-bit data bus, 20ns access time, and support for on-die termination (ODT) and DLL-off mode for power saving. The device supports burst lengths of 8 and 4, and includes programmable CAS latency and additive latency. It operates over a temperature range of 0°C to +95°C (case temperature) for standard operation.
The IS43TR16256AL-107MBLI-TR utilizes advanced DRAM process technology to achieve high density and low power. It features auto-refresh and self-refresh modes, with a typical self-refresh current of . The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for signal integrity in high-speed systems.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are required. The 1.35V operation makes it ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The device requires a stable 1.35V supply and a separate VDDQ supply for the I/O.
直接替换替代料： IS43TR16256AL-107MBLI-TR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IS43TR16256AL-107MBLI-TR （相同外形与封装尺寸） ——差异在于 Package, Supply Voltage, Memory Size, Clock Frequency, Data Rate.
快速对比工具——选择替代料号进行并排对比：
MT41K256M16HA-125
✓ 有现货
$6.3636 / 个
查看数据手册 →IS43TR16256BL-107MBLI-TR
📋 参考替代料（不在目录中）
IS43TR16256A-107MBLI
📋 参考替代料（不在目录中）
IS43TR16256B-107MBLI
📋 参考替代料（不在目录中）
IS43TR16256AL-15HBLI
📋 参考替代料（不在目录中）
IS43TR16256AL-107MBLI-TR 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4 Gbit |
| 存储组织 | 256M x 16 |
| 数据速率 | 1866 Mbps |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Supply Voltage (VDD) | 1.35 V ± 0.1 V |
| Supply Voltage (VDDQ) | 1.35 V ± 0.1 V |
| 封装 | 96-TWBGA (9x13 mm) |
| 接口 | Parallel |
| 工作温度范围 | 0°C to +95°C (Tc) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| ECCN | EAR99 |
| Part Status | Active |
IS43TR16256AL-107MBLI-TR 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ8 — Data input/output 8 |
| 引脚 B3 | DQ9 — Data input/output 9 |
| 引脚 B4 | VDD — Power supply |
| 引脚 B5 | DQ10 — Data input/output 10 |
| 引脚 B6 | DQ11 — Data input/output 11 |
| 引脚 B7 | VSS — Ground |
| 引脚 B8 | DQ12 — Data input/output 12 |
| 引脚 B9 | DQ13 — Data input/output 13 |
| 引脚 B10 | VDDQ — I/O power supply |
| 引脚 B11 | DQ14 — Data input/output 14 |
| 引脚 B12 | DQ15 — Data input/output 15 |
| 引脚 C1 | VDDQ — I/O power supply |
| 引脚 C2 | VSS — Ground |
| 引脚 C3 | VDD — Power supply |
| 引脚 C4 | VSS — Ground |
| 引脚 C5 | VDD — Power supply |
| 引脚 C6 | VSS — Ground |
| 引脚 C7 | VDDQ — I/O power supply |
| 引脚 C8 | VSS — Ground |
| 引脚 C9 | VDD — Power supply |
| 引脚 C10 | VSS — Ground |
| 引脚 C11 | VDDQ — I/O power supply |
| 引脚 C12 | VSS — Ground |
| 引脚 D1 | A0 — Address input 0 |
| 引脚 D2 | A1 — Address input 1 |
| 引脚 D3 | A2 — Address input 2 |
| 引脚 D4 | A3 — Address input 3 |
| 引脚 D5 | A4 — Address input 4 |
| 引脚 D6 | A5 — Address input 5 |
| 引脚 D7 | A6 — Address input 6 |
| 引脚 D8 | A7 — Address input 7 |
| 引脚 D9 | A8 — Address input 8 |
| 引脚 D10 | A9 — Address input 9 |
| 引脚 D11 | A10/AP — Address input 10 / Auto-precharge |
| 引脚 D12 | A11 — Address input 11 |
| 引脚 E1 | A12 — Address input 12 |
| 引脚 E2 | A13 — Address input 13 |
| 引脚 E3 | A14 — Address input 14 |
| 引脚 E4 | A15 — Address input 15 |
| 引脚 E5 | BA0 — Bank address 0 |
| 引脚 E6 | BA1 — Bank address 1 |
| 引脚 E7 | BA2 — Bank address 2 |
| 引脚 E8 | RAS# — Row address strobe |
| 引脚 E9 | CAS# — Column address strobe |
| 引脚 E10 | WE# — Write enable |
| 引脚 E11 | CS# — Chip select |
| 引脚 E12 | CKE — Clock enable |
| 引脚 F1 | ODT — On-die termination |
| 引脚 F2 | CK — Clock (positive) |
| 引脚 F3 | CK# — Clock (negative) |
| 引脚 F4 | VDD — Power supply |
| 引脚 F5 | VSS — Ground |
| 引脚 F6 | VDD — Power supply |
| 引脚 F7 | VSS — Ground |
| 引脚 F8 | VDDQ — I/O power supply |
| 引脚 F9 | VSS — Ground |
| 引脚 F10 | VDD — Power supply |
| 引脚 F11 | VSS — Ground |
| 引脚 F12 | VDDQ — I/O power supply |
| 引脚 G1 | DM0 — Data mask 0 |
| 引脚 G2 | DQS0 — Data strobe 0 (positive) |
| 引脚 G3 | DQS0# — Data strobe 0 (negative) |
| 引脚 G4 | VSS — Ground |
| 引脚 G5 | VDD — Power supply |
| 引脚 G6 | VSS — Ground |
| 引脚 G7 | VDDQ — I/O power supply |
| 引脚 G8 | VSS — Ground |
| 引脚 G9 | VDD — Power supply |
| 引脚 G10 | VSS — Ground |
| 引脚 G11 | DM1 — Data mask 1 |
| 引脚 G12 | DQS1 — Data strobe 1 (positive) |
| 引脚 H1 | DQS1# — Data strobe 1 (negative) |
| 引脚 H2 | VDDQ — I/O power supply |
| 引脚 H3 | VSS — Ground |
| 引脚 H4 | VDD — Power supply |
| 引脚 H5 | VSS — Ground |
| 引脚 H6 | VDDQ — I/O power supply |
| 引脚 H7 | VSS — Ground |
| 引脚 H8 | VDD — Power supply |
| 引脚 H9 | VSS — Ground |
| 引脚 H10 | VDDQ — I/O power supply |
| 引脚 H11 | VSS — Ground |
| 引脚 H12 | VDD — Power supply |
典型应用
IS43TR16256AL-107MBLI-TR 适用于 6 应用s: Server Memory, Networking Equipment, Industrial Computing, Embedded Systems, Telecommunications, Consumer Electronics.
Server Memory
The IS43TR16256AL-107MBLI-TR provides high-density, low-power memory for server applications. Its 4Gb capacity and 1866 Mbps data rate support demanding workloads, while 1.35V operation reduces power consumption in data centers. The 256Mx16 organization allows flexible memory configurations, and the 96-TWBGA package enables compact PCB layouts. In servers, this DDR3L SDRAM can be used in memory modules or as discrete components on motherboards, delivering reliable performance for cloud computing, virtualization, and database applications.
推荐
Networking Equipment
In networking equipment such as routers and switches, the IS43TR16256AL-107MBLI-TR offers the high bandwidth and low latency required for packet processing. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply minimizes power dissipation in always-on network devices. The 256Mx16 organization provides ample buffer space for routing tables and packet queues. The device's compatibility with 1.5V DDR3 allows integration into existing designs, and its 96-TWBGA package is ideal for space-constrained line cards.
推荐
Industrial Computing
The IS43TR16256AL-107MBLI-TR is well-suited for industrial computing applications such as PLCs, HMI panels, and embedded PCs. Its wide operating temperature range of 0°C to +95°C ensures reliable operation in harsh environments. The low 1.35V operation reduces heat generation, which is critical in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging, while the 1866 Mbps data rate enables fast data processing. The 96-TWBGA package is robust for industrial PCB assembly.
推荐
Embedded Systems
For embedded systems requiring high memory density, the IS43TR16256AL-107MBLI-TR provides 4Gb of DDR3L SDRAM in a compact 96-TWBGA package. Its 1.35V operation is ideal for battery-powered devices, extending operational life. The 256Mx16 organization offers a wide data bus for efficient data transfer, and the 1866 Mbps data rate supports real-time processing. The device's self-refresh and DLL-off modes help reduce power consumption during idle periods, making it suitable for portable and IoT devices.
推荐
Telecommunications
In telecommunications infrastructure, the IS43TR16256AL-107MBLI-TR supports high-speed data buffering and processing. Its 1866 Mbps data rate meets the demands of 5G and LTE base stations, while the 1.35V supply reduces power consumption in remote radio units. The 4Gb capacity provides ample storage for signal processing algorithms and protocol stacks. The device's backward compatibility with 1.5V DDR3 simplifies system design, and its 96-TWBGA package is suitable for compact line cards and baseband units.
推荐
Consumer Electronics
The IS43TR16256AL-107MBLI-TR is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb capacity supports high-definition video streaming and multitasking, while the 1.35V operation reduces power consumption in always-on devices. The 1866 Mbps data rate ensures smooth performance for graphics and multimedia applications. The 256Mx16 organization provides a wide data path for efficient data transfer, and the 96-TWBGA package enables slim device designs.
推荐
推荐产品汇总
工程参考数据： IS43TR16256AL-107MBLI-TR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IS43TR16256BL-107MBLI-TR | IS43TR16256A-107MBLI | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Micron Technology |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
关键差异点
- Low voltage operation (1.35V) reduces power consumption by 20% compared to 1.5V DDR3 （对比 IS43TR16256A-125KBLI (1.5V))
- High data rate of 1866 Mbps enables faster data transfer （对比 IS43TR16256AL-15HBLI (1333 Mbps))
- Backward compatible with 1.5V DDR3 （对比 MT41K256M16HA-125 (1.35V only))
设计说明
For reliable operation at 1866 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 40-60 ohm single-ended impedance and 80-120 ohm differential impedance for DQS. Keep trace lengths matched within +/- 0.5mm for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane.
The device requires a stable 1.35V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current during refresh and active operations. The typical IDD7 (operating current) is [DATA_NEEDED: IDD7 value], so size the regulator accordingly. Add bulk capacitance (10uF) near the memory power pins.
The maximum operating temperature is 95°C case temperature. In high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The power dissipation depends on operating frequency and load. For typical operation, the power dissipation is [DATA_NEEDED: power dissipation value]. Use thermal vias under the package to improve heat transfer to the PCB.
合规信息
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
