IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
料号： IS43TR16256AL-107MBL ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $6 | $6,000.00 |
IS43TR16256AL-107MBL 概述
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, networking equipment, and industrial computing where power efficiency is critical.
Key features include a parallel interface with 933 MHz clock speed, 20 ns access time, and support for 1866MT/s data rate. The device supports various burst lengths (8 and 4 with burst chop), on-die termination (ODT), and programmable CAS latency. It operates over a temperature range of 0°C to +95°C (case) and is RoHS compliant.
The IS43TR16256AL-107MBL utilizes advanced DRAM process technology, providing high reliability and performance. It features auto-refresh and self-refresh modes, which are essential for low-power standby operation. The 96-ball TWBGA package ensures excellent thermal and electrical performance, making it suitable for space-constrained designs.
Typical applications include networking routers and switches, enterprise storage systems, industrial PCs, and embedded computing platforms. Its low voltage and high density make it ideal for memory-intensive applications where power efficiency is a priority.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity at high speeds, including matched trace lengths and controlled impedance.
直接替换替代料： IS43TR16256AL-107MBL ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IS43TR16256AL-107MBL （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Burst Length, Supply Voltage, CAS Latency.
快速对比工具——选择替代料号进行并排对比：
IS43TR16256AL-107MBLI
✅ 直接替换✓ 有现货
$2 / 个
查看数据手册 →IS43TR16256BL-107MBL
✅ 直接替换📋 参考替代料（不在目录中）
IS43TR16256AL-125KBL
✅ 直接替换✓ 有现货
$5.6 / 个
查看数据手册 →IS43TR16256AL-107MBLI-TR
✅ 直接替换✓ 有现货
$5.6 / 个
查看数据手册 →MT41K256M16HA-107G:E
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$4 / 个
查看数据手册 →K4B4G1646E-BYMATCV
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.9 / 个
查看数据手册 →H5TC4G63AFR-PBR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.9091 / 个
查看数据手册 →IS43TR16256AL-107MBL 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4 Gbit |
| 存储组织 | 256M x 16 |
| 电源电压 | 1.35 V |
| 数据速率 | 1866 MT/s |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| CAS 延迟 | 13 |
| 接口 | Parallel |
| 封装 | 96-TWBGA (9x13 mm) |
| 工作温度 | 0°C to +95°C (case) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT) |
IS43TR16256AL-107MBL 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — DQ power supply |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — DQ ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
| 引脚 E1 | CK — Clock input |
| 引脚 E2 | CK# — Complementary clock input |
| 引脚 E3 | CKE — Clock enable |
| 引脚 F1 | CS# — Chip select |
| 引脚 F2 | RAS# — Row address strobe |
| 引脚 F3 | CAS# — Column address strobe |
| 引脚 G1 | WE# — Write enable |
| 引脚 G2 | ODT — On-die termination |
| 引脚 G3 | A0 — Address input 0 |
典型应用
IS43TR16256AL-107MBL 适用于 6 应用s: Networking Routers and Switches, Enterprise Storage Systems, Industrial PCs, Embedded Computing Platforms, Telecommunications Equipment, Consumer Electronics.
Networking Routers and Switches
The IS43TR16256AL-107MBL provides high-density, low-power memory for packet buffering and routing tables in networking equipment. Its 1866MT/s data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on infrastructure. The 96-TWBGA package fits compact line cards, and the wide temperature range supports reliable operation in telecom environments.
推荐
Enterprise Storage Systems
In enterprise storage, the IS43TR16256AL-107MBL serves as cache or buffer memory, offering high bandwidth and low latency. Its 4Gb density and 256Mx16 organization enable efficient data caching, while the 1.35V supply minimizes power in large arrays. The device's auto-refresh and self-refresh modes support low-power standby, crucial for energy-efficient data centers.
推荐
Industrial PCs
The IS43TR16256AL-107MBL is ideal for industrial PCs requiring robust memory in harsh environments. Its 0°C to +95°C case temperature range ensures reliable operation in factory floors, and the 1.35V low voltage reduces heat generation. The 96-TWBGA package provides excellent thermal performance, and the high data rate supports demanding industrial applications like machine vision and process control.
推荐
Embedded Computing Platforms
For embedded systems, the IS43TR16256AL-107MBL offers a balance of density, speed, and power efficiency. Its 4Gb capacity supports complex applications like real-time data processing, while the 1.35V operation extends battery life in portable devices. The device's small footprint and surface-mount package simplify PCB design, and its compatibility with standard DDR3L controllers makes integration straightforward.
推荐
Telecommunications Equipment
In telecom base stations and switches, the IS43TR16256AL-107MBL provides reliable memory for signal processing and protocol handling. Its high data rate and low power consumption are critical for 24/7 operation, and the wide temperature range ensures performance in outdoor enclosures. The 96-TWBGA package offers robust solder joints for vibration-prone environments.
推荐
Consumer Electronics
The IS43TR16256AL-107MBL is suitable for high-end consumer devices like smart TVs and gaming consoles, where memory bandwidth and power efficiency are paramount. Its 1866MT/s data rate supports smooth 4K video playback, while the 1.35V supply reduces heat in slim enclosures. The device's small package enables compact designs, and its RoHS compliance meets global environmental standards.
推荐
推荐产品汇总
工程参考数据： IS43TR16256AL-107MBL ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IS43TR16256AL-107MBLI | IS43TR16256BL-107MBL | MT41K256M16HA-107G:E | K4B4G1646E-BYMATCV |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) |
| Brand | ISSI | ISSI | ISSI | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Industrial temperature grade option （对比 IS43TR16256BL-107MBL)
- High data rate at low voltage （对比 IS43TR16256AL-125KBL)
- Cross-brand availability （对比 MT41K256M16HA-107G:E)
设计说明
For DDR3L at 1866MT/s, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The IS43TR16256AL-107MBL requires a clean 1.35V supply. Use a dedicated voltage regulator with low output noise and fast transient response. Place a 10uF bulk capacitor and multiple 0.1uF ceramic capacitors near the VDD pins. Ensure the VDDQ supply is separate and well-filtered to prevent data corruption.
The device operates up to +95°C case temperature. In high-ambient environments, ensure adequate airflow or a heatsink. The 96-TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For a 1W power dissipation, the junction temperature rise is 20°C, so keep ambient below 75°C to stay within limits.
合规信息
RoHS compliance confirmed from Mouser and ISSI datasheet. Other compliance data not provided.
