IS43TR16256AL-125KBLI-TR vs H5TC4G63AFR-PBI 对比

详细并排对比 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc 和 H5TC4G63AFR-PBI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中
SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete

规格对比

参数 IS43TR16256AL-125KBLI-TR H5TC4G63AFR-PBI
品牌 ISSI, Integrated Silicon Solution Inc SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $8.25 $6.50
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
数据速率 1600 Mbps DDR3-1600 (PC3L-12800)
CAS 延迟 11 Programmable
Supply Voltage (VDD/VDDQ) 1.35V ± 0.1V, -0.067V —
Backward Compatible Voltage 1.5V —
Row Cycle Time (tRC) 20 ns —
Row Active Time (tRAS) 20 ns —
工作温度范围 -40°C to +95°C (TC) -40°C to +95°C
封装 96-TWBGA (9x13 mm) 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
安装类型 Surface Mount Surface Mount
Burst Length 8 8 (BL8)
On-Die Termination (ODT) Yes Yes
Refresh Modes Auto-refresh, Self-refresh —
RoHS 状态 Compliant Compliant
存储组织 — 256M x 16
Total Memory Size — 4 Gb
电源电压 — 1.35 V
Number of Banks — 8
Refresh Period — 7.8 us at 85°C
Number of Terminals — 96

数据手册与资源

浏览全部产品 创建 BOM 获取报价