ISC011N06LM5ATMA1 vs IAUZ40N06S5N050ATMA1 对比
详细并排对比 ISC011N06LM5ATMA1 出自 Infineon 和 IAUZ40N06S5N050ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC011N06LM5ATMA1 | IAUZ40N06S5N050ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (Trench) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| 封装 | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (3.3 x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | 8 |
| 工作温度范围 | -55C to +175C | -55C to +175C |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Continuous Drain Current (ID, TC) | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on), typ) | — | 5 mΩ at VGS=10 V |
| Maximum Power Dissipation (PD) | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| Channel Type | — | N-Channel Enhancement Mode |
| Thermal Resistance (RthJC, max) | — | [DATA_NEEDED: RthJC] |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Packaging | — | Tape & Reel |