ISC011N06LM5ATMA1 vs IAUZ40N06S5N050ATMA1 Comparison
Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and IAUZ40N06S5N050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N06LM5ATMA1 | IAUZ40N06S5N050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (Trench) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8-33 (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 8 |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Continuous Drain Current (ID, TC) | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on), typ) | — | 5 mΩ at VGS=10 V |
| Maximum Power Dissipation (PD) | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.7 V |
| Channel Type | — | N-Channel Enhancement Mode |
| Thermal Resistance (RthJC, max) | — | [DATA_NEEDED: RthJC] |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Packaging | — | Tape & Reel |