ISC025N08NM5LF2ATMA1 vs ISC028N03LF2SATMA1 对比

详细并排对比 ISC025N08NM5LF2ATMA1 出自 Infineon 和 ISC028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ 量产中
Infineon
ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 ✓ 量产中

规格对比

参数 ISC025N08NM5LF2ATMA1 ISC028N03LF2SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.74 $0.86
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
封装 PG-TDSON-8 FL (Surface Mount) PG-TDSON-8-62 (5x6 mm) with exposed pad
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature range] —
Polarity N-Channel —
RoHS 状态 Compliant —
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
工作结温 — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)
MSL 等级 — 1 (per JEDEC J-STD-020)

数据手册与资源

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