ISC025N08NM5LF2ATMA1 vs ISC028N03LF2SATMA1 Vergleich

Detaillierter Direktvergleich von ISC025N08NM5LF2ATMA1 von Infineon und ISC028N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISC025N08NM5LF2ATMA1 ISC028N03LF2SATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $0,86
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Gehäuse PG-TDSON-8 FL (Surface Mount) PG-TDSON-8-62 (5x6 mm) with exposed pad
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
Polarity N-Channel —
RoHS-Status Compliant —
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Betriebs-Sperrschichttemperatur — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)
MSL-Level — 1 (per JEDEC J-STD-020)

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