ISC028N03LF2SATMA1 vs IPT015N10NF2SATMA1 对比
详细并排对比 ISC028N03LF2SATMA1 出自 Infineon 和 IPT015N10NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC028N03LF2SATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $3.10 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-HSOF-8-10 (9-pin, 8+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| 工作温度范围 | — | -55 °C to +175 °C |
| Technology | — | OptiMOS trench, N-channel enhancement |
| Gate Drive Voltage (typ) | — | 10 V |
| 单脉冲雪崩能量 | — | [DATA_NEEDED: EAS value] |
| RoHS 状态 | — | Compliant |