ISC028N03LF2SATMA1 vs IPT015N10NF2SATMA1 Comparison

Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC028N03LF2SATMA1 IPT015N10NF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Operating Junction Temperature -55 C to +175 C —
Package PG-TDSON-8-62 (5x6 mm) with exposed pad PG-HSOF-8-10 (9-pin, 8+tab)
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
MSL Level 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 315 A
Continuous Drain Current (ID, Ta) — 35 A
On-Resistance (RDS(on)) at VGS=10V — 1.5 mΩ
Gate-Source Threshold (VGS(th)) — 3.8 V at 267 µA
Total Power Dissipation (Ta) — 3.8 W
Total Power Dissipation (Tc) — 300 W
Operating Temperature Range — -55 °C to +175 °C
Technology — OptiMOS trench, N-channel enhancement
Gate Drive Voltage (typ) — 10 V
Single Pulse Avalanche Energy — [DATA_NEEDED: EAS value]
RoHS Status — Compliant

Datasheets & Resources

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