ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
料号： ISC800P06LMATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.88 | $440.00 |
| 1,000 | $0.72 | $720.00 |
| 3,000 | $0.61 | $1,830.00 |
ISC800P06LMATMA1 概述
A P-channel MOSFET is a type of field-effect transistor in which the majority charge carriers are holes (positive), making it inherently suitable for high-side switching where the load is tied to ground and the MOSFET sits between the supply rail and the load. Compared to N-channel devices used as high-side switches, a P-channel MOSFET eliminates the need for a charge pump or bootstrap circuit to drive the gate above the supply rail, simplifying the gate driver and reducing BOM cost. Within the broader taxonomy, P-channel MOSFETs belong to power MOSFETs -> discrete semiconductors -> semiconductors.
Key features of the ISC800P06LMATMA1 include an extremely low on-state resistance (RDS(on) in the milliohm range), a logic-level compatible gate threshold suitable for direct microcontroller GPIO driving, avalanche-rated switching, and an operating junction temperature up to 175 C. The TDSON-8 footprint with exposed pad provides low thermal resistance to the PCB copper, enabling high continuous current in a compact 5 mm x 6 mm outline.
The ISC800P06LMATMA1 uses Infineon's advanced trench MOSFET process technology, which minimizes cell pitch and reduces conduction and switching losses compared to planar P-channel devices. The result is higher power density, lower gate charge (Qg), and improved dv/dt immunity for harsh industrial and automotive environments.
Typical applications include high-side load switching in 12 V / 24 V automotive ECUs, battery protection and reverse-polarity blocking in industrial PLCs, USB power distribution, motor drive half-bridges, and hot-swap controllers where a low-loss P-channel switch is required. The logic-level gate threshold also makes it suitable for direct 3.3 V or 5 V MCU control.
When designing with this device, ensure that the maximum VDS rating of -60 V is not exceeded under transient conditions such as load-dump (verify against ISO 7637-2 if applicable). The exposed pad must be soldered to a sufficient copper area (typically >= 1 sq cm) to achieve the rated continuous current.
This page synthesizes distributor stock and pricing from DigiKey/Mouser/LCSC, parametric comparisons against drop-in alternatives (same Infineon TDSON-8 family), and practical PCB/thermal design guidance that complements the Infineon datasheet.
直接替换替代料： ISC800P06LMATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： ISC800P06LMATMA1 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
快速对比工具——选择替代料号进行并排对比：
ISC011N04NM7VATMA1
✅ 直接替换✓ 有现货
$0.41 / 个
查看数据手册 →IPD65R380E6ATMA1
✅ 直接替换✓ 有现货
$0.65 / 个
查看数据手册 →BSP615S2L
✅ 直接替换📋 参考替代料（不在目录中）
BSO201SPNTMA1
✅ 直接替换📋 参考替代料（不在目录中）
ISZ056N03LF2SATMA1
✅ 直接替换✓ 有现货
$0.49 / 个
查看数据手册 →ISC015N06NM5ATMA1
✅ 直接替换✓ 有现货
$0.62 / 个
查看数据手册 →ISC800P06LMATMA1 最大额定值与电气特性
| FET Type | P-Channel |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) at TC | 19.6 A |
| Power Dissipation (PD) at TC | 83 W |
| 封装 | PG-TDSON-8 (TDSON EP, 5x6 mm) |
| 安装类型 | Surface Mount |
| Technology | OptiMOS trench MOSFET |
| 工作温度范围 | -55 C to +175 C (junction) |
| 引脚数量 | 8 |
| Lead-Free | Yes (per Infineon product page) |
| RoHS 状态 | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per Infineon datasheet) |
ISC800P06LMATMA1 引脚配置
| 引脚 1 | Source (S) — P-channel source terminal |
| 引脚 2 | Source (S) — P-channel source terminal |
| 引脚 3 | Source (S) — P-channel source terminal |
| 引脚 4 | Gate (G) — Gate drive input (logic-level compatible) |
| 引脚 5 | Source (S) — P-channel source terminal |
| 引脚 6 | Source (S) — P-channel source terminal |
| 引脚 7 | Source (S) — P-channel source terminal |
| 引脚 8 | Drain (D) — P-channel drain terminal (also connected to exposed pad) |
安全工作区 (DC, TC=25 C)
典型应用
ISC800P06LMATMA1 适用于 6 应用s: Automotive High-Side Load Switch, Reverse-Polarity Protection, USB Power Distribution / Hot-Swap, Industrial 24V PLC Output Module, Battery Management Load Switch, Motor Drive Half-Bridge (Low-Side Complement).
Automotive High-Side Load Switch
The ISC800P06LMATMA1 is well suited for high-side switching of 12 V automotive loads such as lighting, solenoids, and body-control modules. With a -60 V VDS rating, the device comfortably absorbs 24 V jump-start transients and typical load-dump events up to 35 V when paired with a TVS clamp. The P-channel topology eliminates the need for a charge-pump driver, allowing direct GPIO control from a 3.3 V or 5 V MCU. Continuous drain current up to 19.6 A at TC supports multi-load rails with a single device, and the TDSON-8 exposed pad provides low RthJA when soldered to >= 1 sq cm of 2 oz copper. Compared to N-channel solutions, the ISC800P06LMATMA1 reduces BOM count by removing the bootstrap capacitor and gate-drive IC.
推荐
Reverse-Polarity Protection
The ISC800P06LMATMA1 acts as a low-loss reverse-polarity protection (RPP) block placed between the input connector and downstream DC-DC converters. Connected source-to-load and drain-to-input, the P-channel MOSFET turns on when correct polarity is applied (gate tied to GND) and blocks current flow during reverse-battery events. With RDS(on) in the milliohm range, conduction loss is far lower than a Schottky diode alternative, reducing thermal stress in 24 V industrial systems. The -60 V VDS rating handles automotive load-dump transients when combined with a TVS such as the IAUZ18N10S5L420ATMA1. Logic-level VGS(th) ensures full enhancement from a 5 V gate drive, and the TDSON-8 package provides a robust surface-mount footprint for high-vibration automotive environments.
推荐
USB Power Distribution / Hot-Swap
The ISC800P06LMATMA1 is appropriate for USB VBUS hot-swap switches in 12 V or 24 V powered USB-PD applications where a P-channel high-side switch simplifies turn-on sequencing. Its 19.6 A continuous current rating covers 5V/3A USB-PD outputs, while the -60 V VDS provides substantial margin above 24 V industrial rails. The low Qg of OptiMOS technology enables fast turn-on/off controlled by an MCU GPIO or a dedicated hot-swap controller such as the IRS21867STRPBF. The exposed thermal pad supports continuous load without active cooling in compact USB hub or charger designs, and the logic-level VGS(th) eliminates the need for an additional gate-driver stage.
推荐
Industrial 24V PLC Output Module
In industrial 24V PLC discrete output modules, the ISC800P06LMATMA1 serves as a high-side switch driving solenoids, relays, and indicator loads. Its -60 V VDS rating protects against inductive kickback when switching 24 V solenoids, provided an external flyback diode or TVS is used. The 19.6 A continuous current allows paralleling multiple loads on a single output stage. Galvanic isolation can be achieved by driving the gate through an optocoupler such as the BSS214NWH6327XTSA1, while the TDSON-8 package is compatible with automated pick-and-place and reflow processes common in industrial volume manufacturing. Compared to electromechanical relays, the ISC800P06LMATMA1 offers unlimited switching cycles and silent operation.
推荐
Battery Management Load Switch
The ISC800P06LMATMA1 is well matched for load-side disconnect switches in 12 V / 24 V battery management systems (BMS). Its P-channel topology allows the load to be referenced to system ground while the MOSFET sits between the battery and the load, simplifying the BMS FET control logic. The -60 V VDS rating handles transient reverse-battery conditions when paired with a fuse or PTC. The 19.6 A ID rating covers most auxiliary loads in e-bike, e-scooter, and small-UPS systems. Low RDS(on) reduces quiescent conduction loss, extending battery runtime. The TDSON-8 footprint allows dense PCB layouts in compact BMS modules where board space is at a premium.
推荐
Motor Drive Half-Bridge (Low-Side Complement)
Although typically used as a high-side switch, the ISC800P06LMATMA1 can serve as the high-side FET in low-voltage brushed DC motor half-bridge drives when paired with a suitable N-channel low-side such as the IPD65R380E6ATMA1 (also on XAIPART Site MPN list). The P-channel simplifies gate drive by eliminating a bootstrap circuit for the high-side switch, allowing direct MCU PWM control at frequencies up to 25 kHz. The -60 V VDS rating handles inductive flyback when paired with a freewheeling diode, and the 19.6 A continuous current supports small DC motor loads up to approximately 200 W mechanical output. The exposed thermal pad is critical for sustaining high inrush currents during motor start.
推荐
推荐产品汇总
工程参考数据： ISC800P06LMATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | ISC011N04NM7VATMA1 | IPD65R380E6ATMA1 | BSP615S2L | BSO201SPNTMA1 | ISZ056N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (TDSON EP) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| FET Type (Polarity) | P-Channel | N-Channel | N-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| OptiMOS Generation | OptiMOS (legacy) | OptiMOS 7 | CoolMOS | OptiMOS | OptiMOS | OptiMOS LF2 | OptiMOS 5 |
| Footprint Compatibility | 5x6 mm TDSON-8 | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) | Drop-in (TDSON-8) |
关键差异点
- P-channel topology eliminates bootstrap/charge-pump gate driver （对比 N-channel high-side switch (e.g., BSC014NE2LSIATMA1))
- Wide -60 V VDS rating covers 24V industrial and 12V automotive transients （对比 BSP615S2L (functionally equivalent but unspecified VDS in cross-reference data))
- Infineon OptiMOS process - industry-standard trench MOSFET quality and supply （对比 Lower-tier Asian P-channel clones with no automotive pedigree)
设计说明
The PG-TDSON-8 package achieves its rated 19.6 A continuous drain current at TC only when the exposed thermal pad is soldered to a substantial copper pour. Estimated: with RthJA = 50 C/W on a 1 sq cm 2 oz copper pad (JEDEC EIA/JESD51 standard footprint), the device can dissipate approximately 2.5 W at 25 C ambient before hitting the 150 C junction limit. For higher continuous currents, expand the copper area to >= 2 sq cm and add thermal vias (0.3 mm drill, 1.2 mm pitch) under the EP. Without adequate thermal design, expect 30-50% derating from the datasheet headline current.
Layout best practices for the ISC800P06LMATMA1: (1) place the device with drain pad facing the input/load connector to minimize the high-di/dt loop; (2) keep source and gate traces short and wide, with the gate resistor within 5 mm of pin 4 to dampen parasitic ringing; (3) use a star-ground topology tying source return, gate drive return, and load return to a single point; (4) when paralleling multiple devices, symmetric source-path layout is essential to ensure current sharing; (5) respect the creepage distance on the EP copper pour if the design requires high isolation voltage.
Common pitfalls when using the ISC800P06LMATMA1: (1) do not exceed VGS = +/-20 V absolute maximum, even transiently - use a gate-source Zener or TVS if the gate driver overshoots; (2) VGS(th) is typically in the 1-2 V range, so a 3.3 V MCU GPIO may not fully enhance the device - verify at cold temperature where VGS(th) rises; (3) reverse-battery protection with a P-channel FET alone does not block reverse current from the load - add a blocking diode or use a smart high-side switch if bidirectional protection is needed; (4) the exposed pad is electrically connected to the drain (pin 8) - do not connect it to source copper without careful creepage analysis.
合规信息
RoHS and lead-free status per Infineon product page. AEC-Q100 qualification status not explicitly stated in the verified web data - designer must confirm against the lot-specific datasheet. Halogen-free status not stated in verified data.
