ISC800P06LMATMA1 vs ISZ056N03LF2SATMA1 对比
详细并排对比 ISC800P06LMATMA1 出自 Infineon 和 ISZ056N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC800P06LMATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.49 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | 30 V |
| Continuous Drain Current (ID) at TC | 19.6 A | — |
| Power Dissipation (PD) at TC | 83 W | — |
| 封装 | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2.35 V (typ) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| 工作温度范围 | -55 C to +175 C (junction) | -55 C to +175 C |
| 引脚数量 | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |