ISC800P06LMATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC800P06LMATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC800P06LMATMA1
ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
ISC800P06LMATMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC800P06LMATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.49 |
| FET Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -60 V | 30 V |
| Continuous Drain Current (ID) at TC | 19.6 A | β |
| Power Dissipation (PD) at TC | 83 W | β |
| Package | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2.35 V (typ) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 C to +175 C |
| Pin Count | 8 | β |
| Lead-Free | Yes (per Infineon product page) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Avalanche Rated | Yes (per Infineon datasheet) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | StrongIRFET 2 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |