ISZ028N03LF2SATMA1 vs ISC015N03LF2SATMA1 对比
详细并排对比 ISZ028N03LF2SATMA1 出自 Infineon 和 ISC015N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 量产中
规格对比
| 参数 | ISZ028N03LF2SATMA1 | ISC015N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.96 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封装 | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8-62 (TDSON EP) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 2 (<= 40 V trench) |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 43 A |
| Continuous Drain Current (ID) at TC=25C | — | 214 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2.35 V |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 125 W |
| Lead-Free | — | Yes |