ISZ028N03LF2SATMA1 vs ISC015N03LF2SATMA1 Vergleich

Detaillierter Direktvergleich von ISZ028N03LF2SATMA1 von Infineon und ISC015N03LF2SATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC015N03LF2SATMA1 ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon

ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon

ISC015N03LF2SATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter ISZ028N03LF2SATMA1 ISC015N03LF2SATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,49 $0,96
FET Type N-Channel —
Technology StrongIRFET 2 (Trench MOSFET) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Gehäuse PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8-62 (TDSON EP)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (junction, typical) -55C to +175C
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
RoHS-Status Compliant Compliant
MSL-Level 1 —
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 2 (<= 40 V trench)
Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 43 A
Continuous Drain Current (ID) at TC=25C — 214 A
On-Resistance RDS(on) max at VGS=10V — 1.5 mΩ
Gate Threshold Voltage VGS(th) — 2.35 V
Power Dissipation at TA=25C — 3 W
Power Dissipation at TC=25C — 125 W
Lead-Free — Yes

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern