K3K8K80BM-MGCP vs K3KL8L80CM-MGCT 对比
详细并排对比 K3K8K80BM-MGCP 出自 Samsung Electronics 和 K3KL8L80CM-MGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3K8K80BM-MGCP | K3KL8L80CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | LPDDR5 SDRAM (DRAM) | LPDDR5X SDRAM |
| Density | 64 Gb | 32 Gbit (4 GB) |
| 存储组织 | 2G x 32 | x32 |
| 数据速率 | 6400 Mbps | — |
| 接口 | LPDDR5 (CMOS) | LPDDR5X (JEDEC LPDDR5 extension) |
| 封装 | FBGA-315 (PBGA315) | 315-ball FBGA |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 工作温度 | -25C to +85C | -25C to +85C |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Memory Category | Volatile DRAM | — |
| RoHS 状态 | Compliant | Compliant (per JLCPCB listing) |
| Lead Free | Yes | — |
| Application Class | Specialized ICs / Memory | — |
| I/O Width | 32-bit | — |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Application Segment | — | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |