K3KL9L90DM-JGCT vs K3KL2L20DM-JGCT 对比
详细并排对比 K3KL9L90DM-JGCT 出自 Samsung Electronics 和 K3KL2L20DM-JGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL9L90DM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $65.18 | $20.80 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit | 48 Gb |
| 封装 | FBGA-315 | 441-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -25C to +85C | -25C to +85C |
| 数据速率 | [DATA_NEEDED: data rate for JGCT speed grade] | 7500 Mbps |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| 存储组织 | [DATA_NEEDED: x organization] | x64 |
| Bank Architecture | [DATA_NEEDED: bank/group configuration] | — |
| 接口 | [DATA_NEEDED: channel configuration] | LPDDR5X (JEDEC low-power DRAM interface) |
| RoHS 状态 | Compliant | unknown |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Dimensions | [DATA_NEEDED: body dimensions] | — |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |