K3KL9L90DM-JGCT vs K3KL2L20DM-JGCT Comparación
Comparación detallada lado a lado de K3KL9L90DM-JGCT por Samsung Electronics y K3KL2L20DM-JGCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
K3KL9L90DM-JGCT ✓ Activo
Comparación de especificaciones
| Parámetro | K3KL9L90DM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,18 | $20,80 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit | 48 Gb |
| Encapsulado | FBGA-315 | 441-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -25C to +85C | -25C to +85C |
| Velocidad de datos | [DATA_NEEDED: data rate for JGCT speed grade] | 7500 Mbps |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Organización de memoria | [DATA_NEEDED: x organization] | x64 |
| Bank Architecture | [DATA_NEEDED: bank/group configuration] | — |
| Interfaz | [DATA_NEEDED: channel configuration] | LPDDR5X (JEDEC low-power DRAM interface) |
| Estado RoHS | Compliant | unknown |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Dimensions | [DATA_NEEDED: body dimensions] | — |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |