K3KL9L90DM-JGCT vs K3KL2L20DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KL9L90DM-JGCT von Samsung Electronics und K3KL2L20DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung
K3KL9L90DM-JGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3KL9L90DM-JGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,18 | $20,80 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit | 48 Gb |
| Gehäuse | FBGA-315 | 441-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -25C to +85C | -25C to +85C |
| Datenrate | [DATA_NEEDED: data rate for JGCT speed grade] | 7500 Mbps |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Speicherorganisation | [DATA_NEEDED: x organization] | x64 |
| Bank Architecture | [DATA_NEEDED: bank/group configuration] | — |
| Schnittstelle | [DATA_NEEDED: channel configuration] | LPDDR5X (JEDEC low-power DRAM interface) |
| RoHS-Status | Compliant | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Dimensions | [DATA_NEEDED: body dimensions] | — |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |