K4A4G085WD-BCTD vs K4A4G085WD-BCRC 对比
详细并排对比 K4A4G085WD-BCTD 出自 Samsung Electronics 和 K4A4G085WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 量产中规格对比
| 参数 | K4A4G085WD-BCTD | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $3.58 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 Mbps/pin | 2400 Mb/s (PC2400) |
| 电源电压 | 1.2 V | 1.2 V |
| 工作温度 | 0C to +85C | — |
| 封装 | 78-ball FBGA | FBGA-78 (TFBGA) |
| Ball Pitch | 0.8 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (JEDEC-compatible) | Parallel |
| Speed Class | DDR4-2666 (PC4-21300) | — |
| Bank Architecture | DDR4 bank-group architecture | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS Status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Memory Density | — | 4 Gbit |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| 工作温度范围 | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |