K4A4G085WF-BITD vs K4A4G085WG-BCWE 对比
详细并排对比 K4A4G085WF-BITD 出自 Samsung Electronics 和 K4A4G085WG-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WF-BITD | K4A4G085WG-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.65 | $2.68 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | — |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| VPP Voltage | 2.5 V | — |
| 工作温度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 封装 | 78-ball FBGA (78FBGA) | FBGA-78 (BCW) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | BL8 |
| CAS 延迟 | CL19 (typical at 2666 Mbps) | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| 接口 | Parallel, DDR4 SSTL12 | Parallel (DDR4) |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: refresh rate specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| 存储容量 | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| 数据速率 | — | 3200 Mbps/pin |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| RoHS 状态 | — | Compliant |
| Packaging | — | Tray |