K4A4G085WG-BCWE - 4Gb DDR4 3200Mbps SDRAM | Samsung
料号： K4A4G085WG-BCWE ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.62 | $36.20 |
| 100 | $3.28 | $328.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.68 | $2,680.00 |
K4A4G085WG-BCWE 概述
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a volatile memory technology in the DRAM hierarchy: SDRAM -> DDR SDRAM -> DDR4 -> main system memory. DDR4 transfers data on both clock edges, doubling effective bandwidth, and reduces operating voltage from DDR3's 1.5 V to 1.2 V, which lowers dynamic and standby power in memory subsystems.
Key features include the 3200 Mbps/pin maximum data rate (DDR4-3200 speed class), 512M x 8 organization suited to 8-bit memory buses, and low 1.2 V core supply. Samsung's D-die process improves density and power efficiency. The device operates in DLL-enabled mode as described in the manufacturer datasheet.
Architecturally, the chip uses internal bank groups and burst lengths of 8 (BL8), with standard DDR4 command/control, address, and data strobe signaling. The FBGA-78 ballout follows the JEDEC-style DDR4 x8 mapping used across Samsung's K4A4G085 family, enabling footprint reuse across speed-grade and die-revision variants.
Typical applications include desktop and embedded system main memory, industrial PCs, networking equipment line-card memory, set-top boxes, and memory modules (RDIMM/UDIMM) using x8 devices.
Design consideration: implement proper VDD/VDDQ decoupling, on-die termination (ODT) configuration, and DDR4 controller training (write leveling, read training) for reliable 3200 Mbps operation.
This page synthesizes distributor stock data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： K4A4G085WG-BCWE ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A4G085WG-BCWE （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Refresh, Memory Type, Interface.
快速对比工具——选择替代料号进行并排对比：
K4A4G085WF-BCWE
✅ 直接替换📋 参考替代料（不在目录中）
K4A4G085WD-BCRC
✅ 直接替换✓ 有现货
$3.58 / 个
查看数据手册 →K4A4G085WD
✅ 直接替换✓ 有现货
$2.05 / 个
查看数据手册 →MT40A512M8RH-075E:B
✅ 直接替换✓ 有现货
$2.15 / 个
查看数据手册 →K4A4G045WD-BCRC
✅ 直接替换✓ 有现货
$3.45 / 个
查看数据手册 →K4A4G085WG-BCWE 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM (Volatile) |
| 存储容量 | 4 Gb |
| Memory Organization | 512M x 8 |
| 数据速率 | 3200 Mbps/pin |
| Speed Class | DDR4-3200 |
| Supply Voltage (VDD) | 1.2 V |
| Technology | D-die DDR4 |
| 封装 | FBGA-78 (BCW) |
| 安装类型 | Surface Mount |
| 接口 | Parallel (DDR4) |
| Burst Length | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) |
| RoHS 状态 | Compliant |
| Packaging | Tray |
K4A4G085WG-BCWE fbga-78 (bcw) 引脚配置指南
K4A4G085WG-BCWE（fbga-78 (bcw) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： K4A4G085WG-BCWE.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4A4G085WG-BCWE 适用于 6 应用s: Desktop and Embedded PC Main Memory, Networking Equipment Line-Card Memory, DDR4 UDIMM and RDIMM Module Manufacturing, Set-Top Box and Smart TV Platforms, Industrial Automation and HMI Systems, Gaming Consoles and Graphics Add-in Cards.
Desktop and Embedded PC Main Memory
The K4A4G085WG-BCWE's 4 Gb density and 512M x 8 organization make it a natural soldered-down main-memory device for desktop motherboards, industrial PCs, and embedded x86 platforms. Its DDR4-3200 data rate supports modern memory controllers, while the 1.2 V supply cuts memory-subsystem power roughly 25% versus DDR3 equivalents, reducing thermal load in fanless enclosures. Placed as individual components around the CPU in a fly-by or topology-matched x8 bus, the chip relies on controller training (write leveling, read gating) to hit 3200 Mbps. Designers should follow the datasheet's DLL-enabled timing parameters and keep trace-length skew within controller budgets for stable operation at full speed.
推荐
Networking Equipment Line-Card Memory
Routers, switches, and network appliances use DDR4 x8 SDRAMs such as the K4A4G085WG-BCWE for packet buffers, routing tables, and control-plane memory. The 3200 Mbps/pin bandwidth supports high-throughput forwarding engines, and 4 Gb per device allows flexible density scaling across multiple packages on one 64-bit bus. The solder-down FBGA-78 package withstands vibration and thermal cycling in telecom racks better than socketed modules. Designers should implement ODT settings and address/command termination per the Samsung datasheet, and verify read/write margin under worst-case temperature because buffer traffic patterns create sustained thermal load that shifts DRAM timing.
推荐
DDR4 UDIMM and RDIMM Module Manufacturing
Module houses building 8-bit-wide or x8-based UDIMMs/RDIMMs use the K4A4G085WG-BCWE as a commodity component: nine devices provide 4 GB with ECC, or eight devices provide 4 GB without ECC. Its 512M x 8 organization and FBGA-78 footprint match standard DDR4 module land patterns, and the DDR4-3200 bin supports mainstream PC4-25600 modules. Samsung's D-die process yields consistent training behavior across large volumes, important for automated module test. Producers should confirm all devices on a module share identical die revision and speed bin per the SPD data, since mixed bins degrade module performance to the slowest component's grade.
推荐
Set-Top Box and Smart TV Platforms
Consumer set-top boxes and smart TVs employ DDR4 x8 SDRAMs for application memory alongside SoC integrated memory controllers. The K4A4G085WG-BCWE's 4 Gb capacity covers Linux-based middleware, channel buffering, and graphics frame buffers, while its 1.2 V operation supports ENERGY STAR-oriented power budgets. Soldered-down FBGA-78 mounting eliminates module sockets, lowering BOM cost for high-volume consumer builds. Designers should place the DRAM close to the SoC to keep fly-by stubs short at 3200 Mbps, apply series termination where the SoC reference design requires it, and validate memory training across the consumer temperature range and boot-cycle conditions.
推荐
Industrial Automation and HMI Systems
Industrial controllers, HMIs, and edge gateways use the K4A4G085WG-BCWE for reliable soldered-down memory in environments with vibration, dust, and wide temperature swings where SO-DIMM sockets are unreliable. The 4 Gb 512M x 8 configuration supports real-time OS images, data logging buffers, and remote I/O tables, and DDR4-3200 headroom lets systems run at derated clocks with large timing margin. The 1.2 V rail simplifies integration with industrial point-of-load regulators. Apply conformal coating compatible with FBGA packages, follow the Samsung datasheet's power-up initialization sequence precisely, and extend controller refresh settings if operating near temperature limits.
推荐
Gaming Consoles and Graphics Add-in Cards
Game consoles, arcade systems, and embedded graphics platforms use DDR4 x8 SDRAMs as shared system/framebuffer memory where GDDR is unnecessary. The K4A4G085WG-BCWE's 3200 Mbps/pin rate delivers 25.6 GB/s per 64-bit channel, adequate for 1080p-class rendering and texture streaming, while 4 Gb per device enables 4-8 GB configurations with moderate BOM cost. Multiple x8 devices populate both sides of a tight PCB, so designers must manage fly-by topology, on-die termination, and read-DBI settings per the Samsung datasheet. Thermal design matters: FBGA packages under sustained graphics load need copper pour or airflow to stay within datasheet temperature limits.
推荐
推荐产品汇总
工程参考数据： K4A4G085WG-BCWE ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A4G085WF-BCWE | K4A4G085WD-BCRC | MT40A512M8RH-075E:B | K4A4G045WD-BCRC |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 4 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 2666-3200 Mbps class (-075E) | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
关键差异点
- Highest speed grade in the 4 Gb x8 family （对比 K4A4G085WD-BCRC)
- Newer D-die process （对比 K4A4G085WF-BCWE)
- x8 organization simplifies 64-bit buses （对比 K4A4G045WD-BCRC)
设计说明
DDR4 x8 layouts at 3200 Mbps require fly-by clock/address routing with per-byte-lane length matching for DQ/DM/DQS (typical skew budgets are on the order of a few ps per mil mismatch - follow your controller vendor's layout guide). Use solid VDD/VDDQ planes, at least one 0.1 uF ceramic capacitor per supply ball plus bulk capacitance per Samsung datasheet recommendations. Keep the K4A4G085WG-BCWE within 2-3 inches of the controller at full speed; longer traces need ODT and drive-strength tuning via mode registers.
DDR4 devices must follow the exact power-up initialization and mode-register programming sequence in the Samsung datasheet; skipping ZQ calibration (ZQCL) or improper MRS sequencing causes intermittent failures that appear only at temperature extremes. Also, controller memory training tables are die-revision specific - if you second-source to MT40A512M8RH-075E:B or K4A4G085WD-BCRC, regenerate SPD/training data and re-run full margin testing rather than assuming parameter interchange.
Estimated: at DDR4-3200 with typical activity, a 4 Gb x8 device draws roughly several hundred milliamps from the 1.2 V rail (exact ICC depends on the datasheet ICC curves and your access pattern). Budget the VDD rail with margin above worst-case ICC, place bulk capacitance near each device group, and verify VDD droop during simultaneous burst writes - transient droop below VDD minimum can corrupt in-flight data even if average current is well within budget.
合规信息
RoHS/lead-free status reflects standard Samsung DDR4 production. Explicit REACH, halogen-free, and conflict-minerals declarations were not present in the provided data - obtain compliance certificates directly from Samsung.
