K4A4G165WF-BCWE vs K4A4G165WD-BCPB 对比
详细并排对比 K4A4G165WF-BCWE 出自 Samsung Electronics 和 K4A4G165WD-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G165WF-BCWE | K4A4G165WD-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $10.65 | $3.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 3200 Mbps | 2133 MT/s |
| Clock Frequency | 1.6 GHz | — |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | — |
| Access Time | 19 ns | — |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-96 (TFBGA) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel | DDR4 (synchronous, source-synchronous strobe) |
| Die Generation | Samsung F-die | D-die |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |