K4A4G165WF-BCWE vs K4A4G165WD-BCPB Comparison
Detailed side-by-side comparison of K4A4G165WF-BCWE by Samsung Electronics and K4A4G165WD-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WF-BCWE | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $10.65 | $3.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 3200 Mbps | 2133 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | — |
| Access Time | 19 ns | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 (TFBGA) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | DDR4 (synchronous, source-synchronous strobe) |
| Die Generation | Samsung F-die | D-die |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant (lead-free suffix) |
| Density | — | 4 Gbit |
| Core Voltage | — | 1.2 V |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS Latency | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |