K4A4G165WG-BCWE vs MT41K64M16TW-107 AUT:J 对比
详细并排对比 K4A4G165WG-BCWE 出自 Samsung Electronics 和 MT41K64M16TW-107 AUT:J 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ 量产中规格对比
| 参数 | K4A4G165WG-BCWE | MT41K64M16TW-107 AUT:J |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $16.90 | $2.85 |
| 存储器类型 | DDR4 SDRAM (volatile DRAM) | SDRAM - DDR3L |
| 存储容量 | 4 Gbit | 1 Gbit |
| Memory Organization | 256M x 16 | — |
| 接口 | Parallel | Parallel |
| 数据速率 | 3200 Mbps | 1866 MT/s (DDR3L-1866) |
| Access Time | 19 ns | 20 ns |
| 电源电压 | 1.2 V | 1.35 V (DDR3L), 1.5 V compatible |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-96 | 96-FBGA (8 x 14 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 933 MHz |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS latency] |
| Refresh Rate | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate] |
| 存储组织 | — | 64M x 16 |
| Temperature Grade | — | AUT (automotive) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |