K4A8G085WB-BCPB vs K4A8G085WB-BIWE 对比
详细并排对比 K4A8G085WB-BCPB 出自 Samsung Electronics 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BCPB | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.78 | $6.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 1G x 8 | — |
| 电源电压 | 1.2 V (nominal) | 1.2 V |
| 数据速率 | 3200 Mbps (PC4-25600) | 3200 Mbps |
| Speed Grade | BC | — |
| CAS Latency (CL) | 22 | — |
| Burst Length | 8 | — |
| Bank Architecture | 16 banks (4 bank groups) | — |
| Refresh Interval | 7.8 us (up to 85C) | — |
| 接口类型 | SSTL-12 | — |
| Termination | ODT / dynamic ODT | — |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) | — |
| 封装 | 78-ball FBGA | 78-FBGA |
| Package Dimensions | 11 mm x 11 mm | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Operating Mode | DLL enabled | — |
| RoHS 状态 | Compliant | Compliant |
| 存储容量 | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| 工作温度 | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS 延迟 | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |