K4A8G085WB-BCPB vs K4A8G085WB-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB-BCPB by Samsung Electronics and K4A8G085WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BCPB | K4A8G085WB-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $4.10 | — |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | — |
| Technology | CMOS, 8Gb B-die | — |
| Package | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | 78-FBGA |
| Number of Terminals | 78 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | 0°C to +85°C |
| Interface | DDR4 SDRAM parallel interface | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| Data Rate | — | 3200 Mbps |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS Latency | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |