K4A8G085WB-BICR vs MT40A1G8SA-075:E 对比
详细并排对比 K4A8G085WB-BICR 出自 Samsung Electronics 和 MT40A1G8SA-075:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ 量产中规格对比
| 参数 | K4A8G085WB-BICR | MT40A1G8SA-075:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.25 | $6.30 |
| 存储器类型 | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 2400 Mbps | 2666 MT/s |
| 电源电压 | 1.2 V (VDD/VDDQ) | — |
| Number of Banks | 16 | — |
| Refresh Cycles | 8192 | — |
| 封装 | 78-ball FBGA | 78-FBGA (7.5x11 mm) |
| 引脚数量 | 78 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | Industrial (I-grade) | — |
| 工作温度范围 | [DATA_NEEDED: exact temperature range for BICR industrial suffix] | 0°C to +95°C |
| Die / Process | Samsung 8Gb B-die DDR4 | — |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Refresh Management | Row refresh, auto-refresh and self-refresh supported | — |
| 存储容量 | — | 8Gbit (1G x 8) |
| 接口 | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |