K4A8G085WC vs H5AN8G6NAFR-UHC 对比
详细并排对比 K4A8G085WC 出自 Samsung Electronics 和 H5AN8G6NAFR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ 量产中
规格对比
| 参数 | K4A8G085WC | H5AN8G6NAFR-UHC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.90 | $5.74 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 存储组织 | 1G x 8 | 512M x 16 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| 电源电压 | 1.2 V | 1.2 V |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| 封装 | 78-ball FBGA (78FBGA) | FBGA-96 |
| 安装类型 | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| 数据速率 | — | 2400 MT/s |
| 工作温度 | — | 0°C to +85°C |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS Compliant | — | Yes |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 4 (with burst chop) |
| Refresh | — | Auto self-refresh |