K4A8G085WC vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WC by Samsung Electronics and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC β ActiveSK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | K4A8G085WC | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.90 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Speed | 2666 Mbps/pin (DDR4-2666) | β |
| Supply Voltage | 1.2 V | 1.2 V |
| Supply Voltage Range | 1.14 V to 1.26 V | β |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | β |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | β |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | β |
| Package | 78-ball FBGA (78FBGA) | FBGA-96 |
| Mounting Type | Surface Mount | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| ZQ Calibration | Yes | β |
| Dynamic On-Chip Termination (ODT) | Yes | β |
| Data Mask (DM) | Yes | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | β |
| Data Rate | β | 2400 MT/s |
| Operating Temperature | β | 0Β°C to +85Β°C |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8, 4 (with burst chop) |
| Refresh | β | Auto self-refresh |