K4A8G085WC vs K4A8G085WC-BCTD 对比

详细并排对比 K4A8G085WC 出自 Samsung Electronics 和 K4A8G085WC-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WC K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC ✓ 量产中
Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ 最后一次采购

规格对比

参数 K4A8G085WC K4A8G085WC-BCTD
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 最后采购期
库存状态 有库存 有库存
单价(USD) $24.90 $50.85
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 1G x 8 1G x 8
Speed 2666 Mbps/pin (DDR4-2666) —
电源电压 1.2 V —
Supply Voltage Range 1.14 V to 1.26 V —
Clock Frequency 1333 MHz (1333.333 GHz nominal, per web data) —
Operating Temperature (K4A8G085WC-BITD) -40 C to +95 C —
Operating Temperature (K4A8G085WC-BCTD) 0 C to +95 C —
封装 78-ball FBGA (78FBGA) 78-ball FBGA (78FBGA)
安装类型 Surface Mount Surface Mount
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
Dynamic On-Chip Termination (ODT) Yes —
Data Mask (DM) Yes —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
数据速率 — 2666 Mbps (PC4-2133)
Supply Voltage (VDD/VDDQ) — 1.2 V (1.14 V to 1.26 V)
Ball Pitch — 0.8 mm
工作温度 — 0C to +95C
Standard Operating Temp Range — 0C to +85C
Burst Length — 8 (chop 4)
Dynamic ODT — Yes
Data Mask — Yes
接口类型 — Synchronous, parallel

数据手册与资源

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