K4A8G085WC vs K4A8G085WC-BCTD Comparison

Detailed side-by-side comparison of K4A8G085WC by Samsung Electronics and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WC

K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics

K4A8G085WC βœ“ Active
Samsung Electronics
K4A8G085WC-BCTD

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy

Specification Comparison

Parameter K4A8G085WC K4A8G085WC-BCTD
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Last_time_buy
Stock Status In Stock In Stock
Unit Price (USD) $24.90 $50.85
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 1G x 8
Speed 2666 Mbps/pin (DDR4-2666) β€”
Supply Voltage 1.2 V β€”
Supply Voltage Range 1.14 V to 1.26 V β€”
Clock Frequency 1333 MHz (1333.333 GHz nominal, per web data) β€”
Operating Temperature (K4A8G085WC-BITD) -40 C to +95 C β€”
Operating Temperature (K4A8G085WC-BCTD) 0 C to +95 C β€”
Package 78-ball FBGA (78FBGA) 78-ball FBGA (78FBGA)
Mounting Type Surface Mount Surface Mount
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
CRC Function Yes Yes
ZQ Calibration Yes Yes
Dynamic On-Chip Termination (ODT) Yes β€”
Data Mask (DM) Yes β€”
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Data Rate β€” 2666 Mbps (PC4-2133)
Supply Voltage (VDD/VDDQ) β€” 1.2 V (1.14 V to 1.26 V)
Ball Pitch β€” 0.8 mm
Operating Temperature β€” 0C to +95C
Standard Operating Temp Range β€” 0C to +85C
Burst Length β€” 8 (chop 4)
Dynamic ODT β€” Yes
Data Mask β€” Yes
Interface Type β€” Synchronous, parallel

Datasheets & Resources

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