K4A8G165WB-BCPB vs K4A8G165WB-BCWE 对比
详细并排对比 K4A8G165WB-BCPB 出自 Samsung Electronics 和 K4A8G165WB-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $6.55 |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| 工作温度 | 0°C to 85°C | 0C to +85C |
| 封装 | 96-ball FBGA (TFBGA-96) | 96FBGA |
| Burst Length | 8 (BL8) | 8 |
| Burst Type | Sequential and Interleave | — |
| CAS 延迟 | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS 状态 | Compliant | Compliant |
| 存储器类型 | — | DDR4 SDRAM |
| 数据速率 | — | 3200 Mbps |
| Access Time (CAS Latency) | — | 19 ns |
| 接口 | — | Parallel |
| 安装类型 | — | Surface Mount |
| Bank Group Architecture | — | Yes |
| On-Die Termination (ODT) | — | Yes, dynamic ODT with ZQ calibration |
| Functions | — | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | — | Yes |