K4A8G165WB-BCPB vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB ✓ ActiveSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $6.55 |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0C to +85C |
| Package | 96-ball FBGA (TFBGA-96) | 96FBGA |
| Burst Length | 8 (BL8) | 8 |
| Burst Type | Sequential and Interleave | — |
| CAS Latency | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS Status | Compliant | Compliant |
| Memory Type | — | DDR4 SDRAM |
| Data Rate | — | 3200 Mbps |
| Access Time (CAS Latency) | — | 19 ns |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Bank Group Architecture | — | Yes |
| On-Die Termination (ODT) | — | Yes, dynamic ODT with ZQ calibration |
| Functions | — | Auto precharge, asynchronous reset, CRC, data mask |
| Lead Free | — | Yes |