K4A8G165WB-BCRC vs K4A8G165WC-BCRC 对比
详细并排对比 K4A8G165WB-BCRC 出自 Samsung Electronics 和 K4A8G165WC-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCRC | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.57 | $23.00 |
| 存储器类型 | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| 存储容量 | 8 Gb (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| 数据速率 | 2400 Mbps (PC4-19200) | 2400 Mbps |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | — |
| Technology | CMOS DRAM, Samsung 8Gb B-die | — |
| 封装 | 96-ball FBGA (PBGA96) | 96-ball FBGA (9mm x 13mm) |
| Ball Pitch | 0.8 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40C to +95C | 0°C to +95°C (case) |
| 接口 | DDR4 (Double Data Rate, synchronous) | 16-bit I/O |
| On-Die Termination | Yes (ODT with dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| CRC / CA Parity | Yes (CRC function) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Refresh | Auto-refresh and self-refresh | Temperature-compensated self-refresh (TCSR) |
| RoHS 状态 | Compliant | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | — | 2.5 V |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS 延迟 | — | Programmable (e.g., 16, 17, 18) |
| RoHS | — | Compliant |