K4A8G165WB-BCRC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSamsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $19.69 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel (DDR4 SDRAM bus) | Parallel, 16-bit DDR |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate | 2400 Mbps/pin (DDR4-2400) | 2400 Mbps |
| Technology | CMOS, B-die 8Gb die | — |
| Package | 96-ball FBGA (PBGA96) | 96-FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | 0 C to +95 C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1333 MHz |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V (1.14 V to 1.26 V) |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| RoHS Status | — | Compliant |