K4A8G165WB-BCRC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCRC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $23.00 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) | β |
| Memory Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps (PC4-19200) | 2400 Mbps |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | β |
| Technology | CMOS DRAM, Samsung 8Gb B-die | β |
| Package | 96-ball FBGA (PBGA96) | 96-ball FBGA (9mm x 13mm) |
| Ball Pitch | 0.8 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +95C | 0Β°C to +95Β°C (case) |
| Interface | DDR4 (Double Data Rate, synchronous) | 16-bit I/O |
| On-Die Termination | Yes (ODT with dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| CRC / CA Parity | Yes (CRC function) | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Refresh | Auto-refresh and self-refresh | Temperature-compensated self-refresh (TCSR) |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | β | 2.5 V |
| Banks | β | 16 (4 bank groups) |
| Burst Length | β | 8 (BL8) |
| CAS Latency | β | Programmable (e.g., 16, 17, 18) |
| RoHS | β | Compliant |