K4A8G165WC-BCTD vs K4A8G165WB-BCPB 对比
详细并排对比 K4A8G165WC-BCTD 出自 Samsung Electronics 和 K4A8G165WB-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD ✓ 量产中
规格对比
| 参数 | K4A8G165WC-BCTD | K4A8G165WB-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $41.20 | $2.30 |
| 存储器类型 | DDR4 SDRAM | — |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 2666 Mbps (DDR4-2666) | — |
| 电源电压 | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1.333 GHz | — |
| 工作温度 | 0C to +95C | 0°C to 85°C |
| 封装 | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA (TFBGA-96) |
| 安装类型 | Surface Mount | — |
| Die Revision | C-die | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes (240 ohm resistor to GND) | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Burst Length | — | 8 (BL8) |
| Burst Type | — | Sequential and Interleave |
| CAS 延迟 | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |