K4AAG085WA-BCTD vs K4AAG085WA-BCWE 对比

详细并排对比 K4AAG085WA-BCTD 出自 Samsung Electronics 和 K4AAG085WA-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4AAG085WA-BCTD K4AAG085WA-BCTD - 16Gb DDR4 2666Mbps SDRAM | Samsung

K4AAG085WA-BCTD - 16Gb DDR4 2666Mbps SDRAM | Samsung

K4AAG085WA-BCTD ✓ 量产中
Samsung Electronics
K4AAG085WA-BCWE K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung

K4AAG085WA-BCWE ✓ 量产中

规格对比

参数 K4AAG085WA-BCTD K4AAG085WA-BCWE
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $10.18 $7.24
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) 16 Gbit
存储组织 2G x 8 2G x 8
数据速率 2666 Mbps 3200 Mbps (DDR4-3200)
电源电压 1.2 V 1.2 V
封装 78-ball FBGA (78FBGA) 78-ball FBGA (9 x 11 mm, 0.8 mm pitch)
工作温度 0C to +85C 0 C to 85 C
Speed Grade DDR4-2666 (-BCTD) —
安装类型 Surface Mount Surface Mount
接口 DDR4 parallel, JEDEC DDR4 ballout JEDEC DDR4
RoHS 状态 Compliant Compliant (per JLCPCB listing)
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Burst Length BL8 (DDR4 standard) —
Application Domain Computing, networking, industrial memory —
Manufacturing Standard JEDEC DDR4 SDRAM —
Lead Time / Stock [DATA_NEEDED: current stock status] —
Operating Voltage Range — 1.14 V to 1.26 V
Memory Width — 8-bit
Refresh — Auto-refresh (per JEDEC DDR4)
Application Class — Main memory / embedded DRAM
Manufacturer — Samsung Electronics

数据手册与资源

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