K4AAG085WM-BCWE vs MT40A2G8AG-062E 对比
详细并排对比 K4AAG085WM-BCWE 出自 Samsung Electronics 和 MT40A2G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG085WM-BCWE | MT40A2G8AG-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.00 | $9.75 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 3200 Mbps (DDR4-3200) | — |
| 电源电压 | 1.2 V | — |
| 工作温度 | 0C to +85C | — |
| 封装 | 78FBGA | 78-FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Speed | — | DDR4-3200 (3200 MT/s) |
| Clock Frequency | — | 1600 MHz |
| Access Time (Clock Cycle Time) | — | 0.625 ns (tCK) |
| CAS 延迟 | — | CL22 (DDR4-3200) |
| Access Time | — | 19 ns |
| Supply Voltage VDD | — | 1.2 V |
| I/O Interface | — | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | — | 2.5 V |
| Number of Banks | — | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | — | -40C to +95C (per Micron grade table) |
| Die Revision | — | AG (current generation) |