K4B4G1646D-BYK0 vs K4B4G1646D-BMH9 对比
详细并排对比 K4B4G1646D-BYK0 出自 Samsung Electronics 和 K4B4G1646D-BMH9 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BYK0 | K4B4G1646D-BMH9 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.90 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.5 V compatible) | — |
| 数据速率 | 1600 Mbps (PC3-12800) | 2133 Mb/s per pin |
| 封装 | 96-ball FBGA | 96-ball FBGA (9x13mm) |
| 工作温度 | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | Programmable (e.g., 11, 10, 9) | Programmable |
| Burst Length | 8 (with burst chop 4) | 8 and 4 |
| On-Die Termination | Yes | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | Yes |
| RoHS Compliant | Yes | — |
| 引脚数 | 96 | — |
| Die Revision | D-die | — |
| Number of Banks | — | 8 |
| Supply Voltage (VDD) | — | 1.35V |
| Supply Voltage (VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| RoHS 状态 | — | Compliant |