K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
料号： K4B4G1646D-BYK0 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.7 | $370.00 |
| 500 | $3.3 | $1,650.00 |
| 1,000 | $2.9 | $2,900.00 |
K4B4G1646D-BYK0 概述
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture and on-die termination to achieve high-speed data transfer. DDR3L is commonly used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core supply (with 1.5V compatibility), and a 96-ball FBGA package. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It is lead-free and halogen-free, compliant with RoHS standards.
The K4B4G1646D-BYK0 uses Samsung's D-die process technology, offering a balance of performance and power efficiency. The memory operates over a temperature range of 0°C to 85°C (TC), making it suitable for commercial and industrial applications. The 96-ball FBGA package provides a compact footprint for space-constrained designs.
Typical applications include DDR3L memory modules for laptops and all-in-one PCs, networking equipment such as routers and switches, and embedded systems like single-board computers (e.g., OLinuXino boards). Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device supports both 1.35V and 1.5V operation, but the voltage must be consistent across the memory system.
直接替换替代料： K4B4G1646D-BYK0 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4B4G1646D-BYK0 （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Supply Voltage, CAS Latency, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
K4B4G1646E-BYK0
✅ 直接替换✓ 有现货
$1.8 / 个
查看数据手册 →K4B4G1646F-BYK0
✅ 直接替换✓ 有现货
$1.8 / 个
查看数据手册 →K4B4G1646I-BYK0
✅ 直接替换✓ 有现货
$1.75 / 个
查看数据手册 →K4B4G1646D-BMK0
✅ 直接替换✓ 有现货
$5.9 / 个
查看数据手册 →MT41K256M16HA-125
✅ 直接替换✓ 有现货
$6.3636 / 个
查看数据手册 →NT5CB256M16CP-DI
✅ 直接替换✓ 有现货
$6.5 / 个
查看数据手册 →K4B4G1646D-BYK0 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| Density | 4 Gbit |
| 存储组织 | 256M x 16 |
| 电源电压 | 1.35 V (1.5 V compatible) |
| 数据速率 | 1600 Mbps (PC3-12800) |
| 封装 | 96-ball FBGA |
| 工作温度 | 0°C to 85°C |
| CAS 延迟 | Programmable (e.g., 11, 10, 9) |
| Burst Length | 8 (with burst chop 4) |
| On-Die Termination | Yes |
| Lead-Free | Yes |
| 无卤 | Yes |
| RoHS Compliant | Yes |
| 引脚数 | 96 |
| Die Revision | D-die |
K4B4G1646D-BYK0 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V/1.5V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — I/O ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
| 引脚 E1 | A0 — Address input 0 |
| 引脚 E2 | A1 — Address input 1 |
| 引脚 E3 | A2 — Address input 2 |
| 引脚 F1 | A3 — Address input 3 |
| 引脚 F2 | A4 — Address input 4 |
| 引脚 F3 | A5 — Address input 5 |
| 引脚 G1 | A6 — Address input 6 |
| 引脚 G2 | A7 — Address input 7 |
| 引脚 G3 | A8 — Address input 8 |
| 引脚 H1 | A9 — Address input 9 |
| 引脚 H2 | A10/AP — Address input 10 / Auto-precharge |
| 引脚 H3 | A11 — Address input 11 |
| 引脚 J1 | A12/BC — Address input 12 / Burst chop |
| 引脚 J2 | A13 — Address input 13 |
| 引脚 J3 | A14 — Address input 14 |
| 引脚 K1 | BA0 — Bank address 0 |
| 引脚 K2 | BA1 — Bank address 1 |
| 引脚 K3 | BA2 — Bank address 2 |
| 引脚 L1 | CK — Clock input |
| 引脚 L2 | CK# — Complementary clock input |
| 引脚 L3 | CKE — Clock enable |
| 引脚 M1 | CS# — Chip select |
| 引脚 M2 | RAS# — Row address strobe |
| 引脚 M3 | CAS# — Column address strobe |
| 引脚 N1 | WE# — Write enable |
| 引脚 N2 | ODT — On-die termination |
| 引脚 N3 | RESET# — Reset |
典型应用
K4B4G1646D-BYK0 适用于 6 应用s: Laptop Memory Modules, Networking Equipment, Embedded Single-Board Computers, Industrial Automation, Consumer Electronics, Automotive Infotainment.
Laptop Memory Modules
The K4B4G1646D-BYK0 is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its 1.35V operation reduces power consumption, extending battery life. With 4Gb density and 1600 Mbps speed, it meets the requirements of mainstream mobile computing. The 96-ball FBGA package allows compact module designs. When used in a dual-channel configuration, two devices provide 8GB capacity, balancing performance and cost.
推荐
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646D-BYK0 provides high-density, low-power memory for packet buffering and routing tables. Its 1600 Mbps data rate supports high-throughput packet processing. The 1.35V supply reduces heat generation in enclosed networking enclosures. The device's on-die termination improves signal integrity on high-speed buses, ensuring reliable operation in noisy environments. It is suitable for both enterprise and consumer networking hardware.
推荐
Embedded Single-Board Computers
The K4B4G1646D-BYK0 is used in single-board computers like the OLinuXino series, providing 4Gb of DDR3L memory for Linux-based applications. Its low voltage and compact FBGA package are ideal for space-constrained boards. The 256Mx16 organization simplifies PCB routing with fewer address lines. The device supports 1.5V operation, allowing compatibility with legacy DDR3 designs. It is a reliable choice for IoT gateways and industrial controllers.
推荐
Industrial Automation
In industrial PCs and PLCs, the K4B4G1646D-BYK0 offers reliable memory for real-time control and data logging. Its 0°C to 85°C operating temperature range suits industrial environments. The 1.35V supply reduces power dissipation, important for fanless systems. The device's high density allows storing large process data buffers. With a 1600 Mbps data rate, it supports fast data acquisition and processing.
推荐
Consumer Electronics
The K4B4G1646D-BYK0 is used in smart TVs, set-top boxes, and gaming consoles for system memory. Its 4Gb density provides ample space for multimedia applications. The 1.35V operation helps meet energy efficiency standards. The 96-ball FBGA package enables slim device designs. With 1600 Mbps speed, it supports smooth video playback and responsive user interfaces. The device's RoHS compliance meets environmental regulations.
推荐
Automotive Infotainment
The K4B4G1646D-BYK0 is suitable for automotive infotainment systems, providing memory for navigation, audio, and display processing. Its low power consumption is critical for vehicle battery life. The device operates over the automotive temperature range (0°C to 85°C) and is available in a robust FBGA package. The 1600 Mbps data rate supports high-resolution graphics. While not AEC-Q100 qualified, it is used in non-safety-critical automotive applications.
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推荐产品汇总
工程参考数据： K4B4G1646D-BYK0 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4B4G1646E-BYK0 | K4B4G1646F-BYK0 | K4B4G1646I-BYK0 | MT41K256M16HA-125 | NT5CB256M16CP-DI |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Nanya Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V (1.5V compatible) | 1.35V (1.5V compatible) | 1.35V (1.5V compatible) | 1.35V (1.5V compatible) | 1.35V (1.5V compatible) | 1.35V (1.5V compatible) |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 95°C | 0°C to 85°C |
关键差异点
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3. （对比 K4B4G1646D-BMK0)
- D-die revision offers proven reliability and compatibility. （对比 K4B4G1646E-BYK0)
- Samsung's manufacturing quality ensures high yield and consistency. （对比 NT5CB256M16CP-DI)
设计说明
Place 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. Follow the layout guidelines in the Samsung datasheet to minimize trace lengths for DQ and address lines, ensuring matched lengths for signal integrity at 1600 Mbps.
Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. The K4B4G1646D-BYK0 supports programmable ODT; configure it according to the system's memory controller settings. Keep the clock lines (CK/CK#) differential and properly terminated.
The device operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation compared to 1.5V, but verify the thermal profile of the system.
合规信息
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
