K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
料号： K4B4G1646D-BMH9 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
K4B4G1646D-BMH9 概述
DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. It is part of the DDR3 family, which is a successor to DDR2 and offers higher bandwidth and lower power consumption. DDR3L specifically operates at 1.35V, distinguishing it from standard DDR3 (1.5V) and enabling its use in mobile and embedded systems where power efficiency is critical.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, suitable for high-density PCB designs.
Technically, the K4B4G1646D-BMH9 utilizes Samsung's advanced D-die process technology, which enhances speed and reduces power consumption. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for improved signal integrity in high-speed systems. The memory is organized with 8 banks, allowing for efficient interleaving and reduced latency.
Typical applications include embedded systems, networking equipment, industrial computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for DDR3L SODIMM modules and on-board memory in space-constrained designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2133Mb/s. The device requires a 1.35V supply and a separate VDDQ supply, which should be regulated accurately.
直接替换替代料： K4B4G1646D-BMH9 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4B4G1646D-BMH9 （相同外形与封装尺寸） ——差异在于 Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
K4B4G1646D-BHMA
✅ 直接替换✓ 有现货
$2.9 / 个
查看数据手册 →K4B4G1646D-BFMA
✅ 直接替换✓ 有现货
$6.5 / 个
查看数据手册 →K4B4G1646D-BYK0
✅ 直接替换✓ 有现货
$2.9 / 个
查看数据手册 →MT41K256M16HA-125
⚡ 相同封装✓ 有现货
$6.3636 / 个
查看数据手册 →H5TC4G63AFR-RDA
⚡ 相同封装📋 参考替代料（不在目录中）
K4B4G1646D-BMH9 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| Density | 4Gb |
| 存储组织 | 256M x 16 |
| Number of Banks | 8 |
| 数据速率 | 2133 Mb/s per pin |
| Supply Voltage (VDD) | 1.35V |
| Supply Voltage (VDDQ) | 1.35V |
| 封装 | 96-ball FBGA (9x13mm) |
| Ball Pitch | 0.8mm |
| CAS 延迟 | Programmable |
| Burst Length | 8 and 4 |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| 无卤 | Yes |
K4B4G1646D-BMH9 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 A13 | VDD — Power supply |
| 引脚 A14 | VSS — Ground |
| 引脚 A15 | DQ8 — Data input/output 8 |
| 引脚 A16 | DQ9 — Data input/output 9 |
| 引脚 A17 | VDDQ — I/O power supply |
| 引脚 A18 | DQ10 — Data input/output 10 |
| 引脚 A19 | DQ11 — Data input/output 11 |
| 引脚 A20 | VSS — Ground |
| 引脚 A21 | DQ12 — Data input/output 12 |
| 引脚 A22 | DQ13 — Data input/output 13 |
| 引脚 A23 | VDD — Power supply |
| 引脚 A24 | DQ14 — Data input/output 14 |
| 引脚 A25 | DQ15 — Data input/output 15 |
| 引脚 A26 | VSS — Ground |
| 引脚 A27 | VDDQ — I/O power supply |
| 引脚 A28 | VSS — Ground |
| 引脚 A29 | VDD — Power supply |
| 引脚 A30 | VSS — Ground |
| 引脚 A31 | VDDQ — I/O power supply |
| 引脚 A32 | VSS — Ground |
| 引脚 A33 | VDD — Power supply |
| 引脚 A34 | VSS — Ground |
| 引脚 A35 | VDDQ — I/O power supply |
| 引脚 A36 | VSS — Ground |
| 引脚 A37 | VDD — Power supply |
| 引脚 A38 | VSS — Ground |
| 引脚 A39 | VDDQ — I/O power supply |
| 引脚 A40 | VSS — Ground |
| 引脚 A41 | VDD — Power supply |
| 引脚 A42 | VSS — Ground |
| 引脚 A43 | VDDQ — I/O power supply |
| 引脚 A44 | VSS — Ground |
| 引脚 A45 | VDD — Power supply |
| 引脚 A46 | VSS — Ground |
| 引脚 A47 | VDDQ — I/O power supply |
| 引脚 A48 | VSS — Ground |
| 引脚 A49 | VDD — Power supply |
| 引脚 A50 | VSS — Ground |
| 引脚 A51 | VDDQ — I/O power supply |
| 引脚 A52 | VSS — Ground |
| 引脚 A53 | VDD — Power supply |
| 引脚 A54 | VSS — Ground |
| 引脚 A55 | VDDQ — I/O power supply |
| 引脚 A56 | VSS — Ground |
| 引脚 A57 | VDD — Power supply |
| 引脚 A58 | VSS — Ground |
| 引脚 A59 | VDDQ — I/O power supply |
| 引脚 A60 | VSS — Ground |
| 引脚 A61 | VDD — Power supply |
| 引脚 A62 | VSS — Ground |
| 引脚 A63 | VDDQ — I/O power supply |
| 引脚 A64 | VSS — Ground |
| 引脚 A65 | VDD — Power supply |
| 引脚 A66 | VSS — Ground |
| 引脚 A67 | VDDQ — I/O power supply |
| 引脚 A68 | VSS — Ground |
| 引脚 A69 | VDD — Power supply |
| 引脚 A70 | VSS — Ground |
| 引脚 A71 | VDDQ — I/O power supply |
| 引脚 A72 | VSS — Ground |
| 引脚 A73 | VDD — Power supply |
| 引脚 A74 | VSS — Ground |
| 引脚 A75 | VDDQ — I/O power supply |
| 引脚 A76 | VSS — Ground |
| 引脚 A77 | VDD — Power supply |
| 引脚 A78 | VSS — Ground |
| 引脚 A79 | VDDQ — I/O power supply |
| 引脚 A80 | VSS — Ground |
| 引脚 A81 | VDD — Power supply |
| 引脚 A82 | VSS — Ground |
| 引脚 A83 | VDDQ — I/O power supply |
| 引脚 A84 | VSS — Ground |
| 引脚 A85 | VDD — Power supply |
| 引脚 A86 | VSS — Ground |
| 引脚 A87 | VDDQ — I/O power supply |
| 引脚 A88 | VSS — Ground |
| 引脚 A89 | VDD — Power supply |
| 引脚 A90 | VSS — Ground |
| 引脚 A91 | VDDQ — I/O power supply |
| 引脚 A92 | VSS — Ground |
| 引脚 A93 | VDD — Power supply |
| 引脚 A94 | VSS — Ground |
| 引脚 A95 | VDDQ — I/O power supply |
| 引脚 A96 | VSS — Ground |
典型应用
K4B4G1646D-BMH9 适用于 6 应用s: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Systems
The K4B4G1646D-BMH9 is ideal for embedded systems requiring low power and high density memory. Its 1.35V operation reduces power consumption, making it suitable for battery-powered devices. The 4Gb density provides ample storage for operating systems and applications. The 96-ball FBGA package allows for compact PCB designs, essential in space-constrained embedded applications. With data rates up to 2133Mb/s, it supports fast data processing, enhancing system responsiveness. The device's low power and high performance make it a preferred choice for industrial controllers, IoT gateways, and portable devices.
推荐
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMH9 provides high-speed memory for packet buffering and routing tables. Its 2133Mb/s data rate ensures low latency and high throughput, critical for network performance. The 1.35V operation reduces heat generation, improving reliability in dense networking hardware. The 4Gb density allows for large routing tables and efficient packet processing. The device's on-die termination and internal calibration enhance signal integrity, essential for high-speed data transmission. This makes it a reliable choice for enterprise and carrier-grade networking equipment.
推荐
Industrial Computing
The K4B4G1646D-BMH9 is well-suited for industrial computing applications such as PLCs, HMI panels, and industrial PCs. Its low power consumption and high reliability make it ideal for harsh environments. The 4Gb density supports complex control algorithms and data logging. The 96-ball FBGA package ensures robust soldering and thermal performance. With data rates up to 2133Mb/s, it enables fast data processing for real-time control. The device's wide operating temperature range (if specified) would further enhance its suitability for industrial settings. Overall, it provides a balance of performance and efficiency for demanding industrial applications.
推荐
Consumer Electronics
In consumer electronics like set-top boxes, smart TVs, and gaming consoles, the K4B4G1646D-BMH9 provides high-speed memory for multimedia processing. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 4Gb density supports high-definition video streaming and multitasking. The 96-ball FBGA package allows for slim device designs. With data rates up to 2133Mb/s, it ensures smooth playback and responsive user interfaces. The device's low power and high performance make it a popular choice for consumer electronics manufacturers.
推荐
Automotive Infotainment
The K4B4G1646D-BMH9 is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and connectivity features. Its low power consumption is beneficial for vehicle power budgets. The 4Gb density supports complex infotainment software. The 96-ball FBGA package is robust for automotive environments. With data rates up to 2133Mb/s, it enables fast map rendering and media playback. The device's reliability and performance make it a viable option for automotive applications, though AEC-Q100 qualification should be verified for strict automotive requirements.
推荐
Data Center and Cloud Computing
In data centers and cloud computing, the K4B4G1646D-BMH9 can be used in servers and storage systems for caching and buffering. Its high data rate of 2133Mb/s supports fast data access, improving overall system performance. The 1.35V operation reduces power consumption, lowering operational costs in large-scale deployments. The 4Gb density provides sufficient memory for various workloads. The 96-ball FBGA package is suitable for high-density server boards. The device's reliability and performance make it a cost-effective solution for data center applications, though higher-density DDR4 or DDR5 may be preferred for new designs.
推荐
推荐产品汇总
工程参考数据： K4B4G1646D-BMH9 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4B4G1646D-BHMA | K4B4G1646D-BFMA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Pin Compatibility | Reference | Pin-compatible | Pin-compatible | Not pin-compatible (ballout differences) |
关键差异点
- Low voltage operation at 1.35V （对比 MT41K256M16HA-125)
- Higher data rate support up to 2133Mb/s （对比 MT41K256M16HA-125)
- Pin-compatible with other Samsung variants （对比 H5TC4G63AFR-RDA)
设计说明
Ensure stable power supply for VDD and VDDQ at 1.35V. Use low-ESR decoupling capacitors (0.1uF and 1uF) placed close to each power pin to minimize noise and voltage droop during high-speed switching. The device requires both VDD and VDDQ supplies; they should be derived from the same source to avoid potential latch-up.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 50 mils for data groups to ensure signal integrity. Use ground planes to provide a low-inductance return path.
The 96-ball FBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias under the package to dissipate heat. For typical applications, the power dissipation is low due to 1.35V operation, but in high-temperature environments, consider airflow or heatsinking. Monitor junction temperature to stay within the specified operating range.
合规信息
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory ICs.
